Toshiba Electronic Component and Storage Device Co., Ltd. ("Toshiba") announced today that the launch of two models of Toshiba's new S-TOGLTM (small transistor contour-gull-wing pins) and U-MOS IX-H craft chip are Tao power MOSFET- "XPJR6604pb" and "XPJ1R004PB".Two products began to support batch shipments today.

Speaking applications such as autonomous driving systems can ensure reliability through redundant design. Therefore, compared with the standard system, they integrate more devices and require more tablet space.Therefore, to further reduce the size of the car equipment, the power MOSFET can be packed at the high current density.

XPJR6604PB and XPJ1R004PB use Toshiba's new S-TOGLTM packaging (7.0mm × 8.44mm [1]), which is characterized by an unsatisfactory column structure that integrates the source polar connectors and external pins.The multi -needle structure of the source pin reduces the packaging resistance.

Compared with Toshiba TO-220sm (W) packaging products [2] with the same thermal resistance, S-TOGLTM packaging and Toshiba U-MOS IX-H process can be achieved, which can achieve a significant reduction of the pitch resistance by 11%.Compared with To-220sm (W) packaging, the new packaging has reduced the required table sticker area by about 55%.In addition, the newly packaged products can provide a 200A drain -rated current, which is higher than Toshiba -like DPAK + package (6.5mm × 9.5mm [1]) products, thereby achieving large current.Overall, S-TOGLTM packaging can achieve high-density and compact layout, reduce the size of car equipment, and help achieve high heat dissipation.

Since automobile equipment may work in extreme temperature environments, the reliability of the surface installation of welding joints is a key consideration.The S-TOGLTM packaging uses gull-wing pins, which can reduce the stress of the table and improve the reliability of the solder joint.

When multiple devices are required to provide larger working currents for applications, Toshiba supports these two new products to be shipped in a grid threshold voltage [3].This can ensure that the design uses the same group of other products to reduce characteristic deviation.

Toshiba will continue to expand its power semiconductor product line and contribute carbon neutrality through user -friendly and high -performance power devices.

application

-At car equipment: inverter, semiconductor relay, load switch, motor driver, etc.

characteristic

-New new S-Togltm package: 7.0mm × 8.44mm (typical value)

-Ge high rated drain current:

Xpjr6604pb: ID = 200A

XPJ1R004PB: ID = 160A

-AEC-Q101 certification

-Suvang 16949/PPAP [4]

-The low -guide resistance:

Xpjr6604pb: RDS (on) = 0.53m? (Typical value) (VGS = 10V)

XPJ1R004PB: RDS (on) = 0.8m? (Typical value) (VGS = 10V)