The global semiconductor leader in multi-electronic applications is a new series-gallium nitride (GaN) power semiconductor. This series of products belongs to the STPOWER combination of STMicos, which can significantly reduce the energy consumption and size of various electronic products. The target application of this series includes a built-in power supply for consumer electronics, such as chargers, PC external power adapters, LED lighting drives, TVs and other home appliances. The global production of consumer electronics has a large power supply, and if energy efficiency is improved, carbon dioxide emissions can be greatly reduced. In applications where power is applied, the PowerGAN device of STMicase is also suitable for telecom power, industrial drive motors, solar inverters, electric vehicles and their charging facilities.

EDOARDOMERLI, Vice President of Semiconductor Motors and Discrete Devices Products, DDOARDOMERLI, said: "GAN-based product commercial is the next attack phase of power semiconductor, we are ready to release this exciting technical potential. Today, ST released the new series of STPOWER product portfolios, bring breakthrough performance for consumption, industrial and automotive power supply. We will gradually expand the PowerGan product portfolio, so customers can design more efficient, smaller power supply."

technical details

Gallium nitride (GaN) is a broadband composite semiconductor material with a much higher voltage tolerance than conventional silicon materials, and does not affect on-resistance properties, so that there can be reduced conduction loss. In addition, the switching energy efficiency of the GaN product is also high than silicon-based transistors, so that very low switching losses can be achieved. The switching frequency is higher means that the application circuit can use a smaller passive device. All of these advantages allow designers to reduce the total loss of the power converter (reducing heat) and improve energy efficiency. Therefore, GAN can better support the electronics lightweight, for example, compared to the currently common charger, the PC power adapter using the GaN transistor is smaller and lighter.

According to third parties, after using the GaN device, the standard mobile phone charger can be slim up to 40%, or more power is output under the same size conditions, and similar performance improvement can be achieved in terms of energy efficiency and power density. Suitable for consumption , Industrial, automobiles and other electronic products.

As the first product of the new G-HEMT transistor product family, 650V SGT120R65Al has 120m? The maximum conduction resistance (RDS (ON)), 15A's maximum output current and optimized gate-driven Kairen source . This product currently uses industry standard PowerFLAT 5X6 HV compact mount packages, typical applications are PC adapters, USB wall chargers and wireless charging.

The 650V GaN transistor currently developed now, where 120M? RDS (ON) SGT120R65A2S uses 2SPAK? Advanced laminating package, cancel the lead bonding process, improves the energy efficiency and reliability of high-power high frequency applications, SGT65R65AL The on-resistance of the SGT65R65A2S is 65m? RDS (ON), which uses PowerFlat 5x6 HV and 2SPAK packages, respectively. These products are expected to be produced in the second half of 2022.

In addition, the G-FET series also introduces a new set of common-source GaN transistors SGT250R65Alcs with PQFN 5x6 packages, and the on-resistance is 250m? RDS (ON), samples will be available in the third quarter of 2022

The G-FET transistor series is a very fast, ultra-low QRR, a robust GaN common source or D mode FET with a standard silicon gate drive for a variety of power supply designs.

The G-HEMT transistor series is an ultra-fast, zero QRR enhanced mode HEMT, simple, very suitable for applications that are very suitable for frequencies and power.

G-FET and G-HMT are a PowerGAN family of StPower product portfolios.