In recent years, in the efforts of "creating carbon-free society" and "carbon neutrality" and "carbon neutrality", electric vehicles (XeV) are increasingly popular. In order to further improve the efficiency of the system, various car equipmentInverterConverterCircuitThe power semiconductor used in the medium is also proposed, and the SiC power of ultra-low loss is.Component(SiC MOSFET, SiC SBD, etc.) and traditional silicon power components (IGBT, SJ-MOSFET, etc.) are experiencing technological changes.

ROHM is committed to providing a wide range of applications, not only focusing on the industry's advanced SIC power components, but also actively promotes the technology and product development of Si power components and driver ICs. This time, it has developed a high-cost Hybrid IGBT that can provide a higher cost-effective Hybrid IGBT for vehicles and industrial equipment.

"RGWXX65C series" is Hybrid type IGBT, which uses RoHM low loss SiC Schottky barrier diode (SiC SBD) in the feedback unit of IGBT * 2, and the successful rendering of the IGBT product is turned on.switchLoss (hereinafter referred to as "Open Loss" * 3). When using this product in the in-vehicle charger, loss can be reduced by 67% compared to the previous IGBT product, and the loss can be reduced by 24% compared to the super junction MOSFET (SJ-MOSFET), which will help further further cost. Reduce power consumption in car and industrial equipment applications.

The new product has been sold in March 2021 (sample price: 1,200 yen / single, excluding tax), is expected to be subjected to a scale of 20,000 months from December 2021. In addition, the rich design data required to assess and import this series of products is also provided on the RoHM official website, including the application guide and S containing the driving circuit design method.PiCE model, etc. to support the rapid introduction of the market.

In the future, ROHM will continue to develop low-loss power components that meet various needs, while providing design tools and various solutions, through power saving and miniaturization of application systems to reduce environmental load contribution.

● The loss is 67% lower than the previous IGBT product, providing higher cost performance for vehicle electronic equipment and industrial equipment in popularity.

"RGWXX65C series" is Hybrid type IGBT, which uses ROHM low loss SiC SBD in the feedback unit of IGBT (renewal). Successfully reduced the opening loss significantly compared to the IGBT products using Si fast recovery diode (Si-frd), and the loss of the in-vehicle charger application is 67% lower than previous IGBT products. Compared with SJ-MOSFETs that are less than IGBT, the loss can be reduced by 24%. In terms of conversion efficiency, new products can ensure more than 97% of the high efficiency in a wider operating frequency range, and at 100 kHz operating frequency, efficiency can be 3% higher than IGBT, which helps to further reduce car load with higher cost performance. The power consumption of industrial equipment applications.

● Comply with the AEC-Q101 standard, you can use in harsh environments

The new series of products is also in line with the Reliability Standard "AEC-Q101" of the automotive electronics products, even in the harsh environment such as car and industrial equipment.

In order to speed up the application of this series, the rich design data needed to assess and import this series of new products are also provided on the RoHM official website, including the model (SPICE model) of the application guide and simulation of the driving circuit design method.

※ In addition to this series of Hybrid IGBT, product lineup also includes products using Si-FRD as a product of the diode of the diode and the diode diode.

· Car charger · Car DC / DC converter

· Solar inverter (power regulator) · Uninterruptible power supply device (UPS)

* 1) Automotive Electronics Reliability Standard "AEC-Q101"

AEC is AutomoTiVe Electronics Council's abbreviation is a large car manufacturer and a large USElectronic ComponentManufacturer teamed up with the reliability standard of automotive electronic components that were developed. Q101 is specifically targetedSemiconductorComponentTransistor, Diode, etc.) formulated standards.

* 2) IGBT (insulated Gate Bipolar Transistor, insulated gate bipolarCrystalTube), SJ-MOSFET (Super JuncTiON METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR

Both are all power semiconductors that are usually produced by Si substrates, and their devices are different. IGBT is lower than other power semiconductors, but there is a problem that the two-chip structure can work (need two chip structures can be worked), and the SJ-MOSFET does not need to continue the di-MOSFET compared to IGBT. (The single-chip structure can be operated), and there is a smaller turnover, but there is a problem that it is difficult to cope with high power. As a breakthrough, IGBT's seventh diode is used to reduce the Hybrid IGBT that can reduce the loss of the loss of the losses in SiC SBD rather than traditional Si-FRD.

* 3) Opening loss and shutdown loss

Both are the loss (switching loss) generated when the semiconductor element switches such as transistors. The opening loss is the loss generated at the component ON, and the shutdown loss is the loss generated when the component OFF is. Ideally, these losses should be zero, but in fact, due to structural conditions, when switching between ON and OFF, it will inevitably flow unnecessary.CurrentThus, loss, so for power semiconductors, try to reduce these losses is very important.