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Anshen American semiconductor launches innovative ultra-high density offline power solution

  • Author:ROGER
  • Release on:2021-06-30

industryThe first totem pillar PFC controller provides high performance with high cost performance

June 23, 2021 -Promote high energy innovationAnsenmeisemiconductor (On Semiconductor, Nasdaq, NASDO): ON), launchedIndustry's first special critical conduction mode (CRM) totem pillar PFC controllerIt is a new member of the company's ultra high density offline power supply solution set.

In the traditional PFC circuit, the rectifier bridgediodeThe loss in the 240 W power supply is about 4 W, accounting for about 20% of the total loss. In contrast, the energy efficiency of the PFC level is usually 97%, and the LLC circuit implements a similar performance. However, the switch configured with the "Totem" replace the loss of diode, and pulls the boost PFC function to reduce the losses of the bridge, significantly improve the overall energy efficiency. In addition, NCP1680 can be applied to any switch type, whether it is a super bonding silicon MOSFET or silicon carbide (SiC) or gallium nitride (GaN) equipped with a wide band.

The new NCP1680 CRM Totem pillar PFC controller adopts novel current limiting architecture and line phase detection, and combines the verified control algorithm, providing a high-cost totem pillar PFC program without affecting performance. The core of the IC is internal compensation digital loop control. The innovation device uses a constant conduction time CRM architecture with the valley switch. Due to the built-in discontinuous conduction mode (DCM), the valley is simultaneously turned on during the frequency returning work, so that modern energy efficiency standards can be met, including those who require high energy efficient under light load.

This highly integrated device allows the power supply to operate at a general power supply (90 to 265 VAC) to achieve a suggested power level of up to 350 W. Under the 230 VAC power input, the PFC circuit based on NCP1680 can achieve nearly 99% energy efficiency at 300 W. Only a few simple devices can implement full-featured totem pfc on the outside, saving space and device costs. Further reduce the number of devices, implement progressive current limit, no Hall effectsensor.


The NCP1680 uses a small SOIC-16 package, as well as part of the assessment platform, supporting rapid development and debugging advanced totem pillar PFC design.

According to the Totem column switch technology, the high-speed half bridge and the low-speed half-bridge are included, including NCP1680 on the high-speed half bridge, NCP1680 can beCP51820 semi-bridge GaN high electron mobility transistor (HEMT) door driveror NCP51561 Isolated SiC MOSFET door driveruse together. NCP51561 is the isolation dual-channel doordriverWith 4.5 A-source current and 9 A-permeable power peak ability. The new device is suitable for silicon power MOSFET andQuick switch based on SiC's MOSFET deviceProvide short and matching propagation delays. Two separate 5 kVrms (UL1577) electrical isolating doordriverChannels can be used as two lower bridges, two upper bridge switches or one half bridge drive, with programmable dead time. An enable pin will turn off two outputs simultaneously, and NCP51561 provides other important protection functions, such as independent undervoltage locking (UVLO) and enable functions used for two gate drivers.

AnsenmeisemiconductorProvide a wide range of SIC MOSFETs, which provide higher energy efficiency than silicon MOSFET. Low-conducting resistance (RDS (ON)) and smallchipSize ensures low capacitance and door charge (QG) to provide the highest energy efficiency in smaller system sizes, thereby increasing power density. Anshen Mei Semiconductor has released the use of TO-247-4L and D2PAK-7L packages 650 V SIC MOSFETAnd will continue to haar a series of products. In addition,AnsenmeisemiconductorprovideComplete silicon base 650 V SuperFET® III MOSFET product portfolio.