Nomor Bagian Internal | RO-SI8489EDB-T2-E1 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 1.2V @ 250µA |
Vgs (Max): | ±12V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | 4-Microfoot |
Seri: | TrenchFET® |
Rds Pada (Max) @ Id, Vgs: | 44 mOhm @ 1.5A, 10V |
Power Disipasi (Max): | 780mW (Ta), 1.8W (Tc) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | 4-UFBGA |
Nama lain: | SI8489EDB-T2-E1TR |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 765pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
FET Jenis: | P-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 2.5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 20V |
Detil Deskripsi: | P-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot |
Current - Continuous Drain (Id) @ 25 ° C: | - |
Email: | [email protected] |