Nomor Bagian Internal | RO-SI4866DY-T1-E3 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 600mV @ 250µA (Min) |
Vgs (Max): | ±8V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | 8-SO |
Seri: | TrenchFET® |
Rds Pada (Max) @ Id, Vgs: | 5.5 mOhm @ 17A, 4.5V |
Power Disipasi (Max): | 1.6W (Ta) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | 8-SOIC (0.154", 3.90mm Width) |
Nama lain: | SI4866DY-T1-E3-ND SI4866DY-T1-E3TR SI4866DYT1E3 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 33 Weeks |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 4.5V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 2.5V, 4.5V |
Tiriskan untuk Sumber Tegangan (Vdss): | 12V |
Detil Deskripsi: | N-Channel 12V 11A (Ta) 1.6W (Ta) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 11A (Ta) |
Email: | [email protected] |