Nomor Bagian Internal | RO-SI4850EY-T1-GE3 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 3V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | 8-SO |
Seri: | TrenchFET® |
Rds Pada (Max) @ Id, Vgs: | 22 mOhm @ 6A, 10V |
Power Disipasi (Max): | 1.7W (Ta) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | 8-SOIC (0.154", 3.90mm Width) |
Nama lain: | SI4850EY-T1-GE3TR SI4850EYT1GE3 |
Suhu Operasional: | -55°C ~ 175°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 60V |
Detil Deskripsi: | N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 6A (Ta) |
Email: | [email protected] |