Nomor Bagian Internal | RO-SI4712DY-T1-GE3 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | 8-SO |
Seri: | SkyFET®, TrenchFET® |
Rds Pada (Max) @ Id, Vgs: | 13 mOhm @ 15A, 10V |
Power Disipasi (Max): | 2.5W (Ta), 5W (Tc) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | 8-SOIC (0.154", 3.90mm Width) |
Nama lain: | SI4712DY-T1-GE3-ND SI4712DY-T1-GE3TR |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1084pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 30V |
Detil Deskripsi: | N-Channel 30V 14.6A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 14.6A (Tc) |
Email: | [email protected] |