Nomor Bagian Internal | RO-SI4062DY-T1-GE3 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 2.6V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | 8-SO |
Seri: | TrenchFET® |
Rds Pada (Max) @ Id, Vgs: | 4.2 mOhm @ 20A, 10V |
Power Disipasi (Max): | 7.8W (Tc) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | 8-SOIC (0.154", 3.90mm Width) |
Nama lain: | SI4062DY-T1-GE3TR |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 3175pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 60V |
Detil Deskripsi: | N-Channel 60V 32.1A (Tc) 7.8W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 32.1A (Tc) |
Email: | [email protected] |