Nomor Bagian Internal | RO-NTHD4P02FT1G |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 1.2V @ 250µA |
Vgs (Max): | ±12V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | ChipFET™ |
Seri: | - |
Rds Pada (Max) @ Id, Vgs: | 155 mOhm @ 2.2A, 4.5V |
Power Disipasi (Max): | 1.1W (Tj) |
Pengemasan: | Cut Tape (CT) |
Paket / Case: | 8-SMD, Flat Lead |
Nama lain: | NTHD4P02FT1GOSCT |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 6 Weeks |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 300pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
FET Jenis: | P-Channel |
Fitur FET: | Schottky Diode (Isolated) |
Drive Voltage (Max Rds On, Min RDS Aktif): | 2.5V, 4.5V |
Tiriskan untuk Sumber Tegangan (Vdss): | 20V |
Detil Deskripsi: | P-Channel 20V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET™ |
Current - Continuous Drain (Id) @ 25 ° C: | 2.2A (Tj) |
Email: | [email protected] |