Nomor Bagian Internal | RO-E3M0065090D |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 3.5V @ 5mA |
Vgs (Max): | +18V, -8V |
Teknologi: | SiCFET (Silicon Carbide) |
Paket Perangkat pemasok: | TO-247-3 |
Seri: | Automotive, AEC-Q101, E |
Status RoHS: | RoHS Compliant |
Rds Pada (Max) @ Id, Vgs: | 84.5 mOhm @ 20A, 15V |
Power Disipasi (Max): | 125W (Tc) |
Pengemasan: | Tube |
Paket / Case: | TO-247-3 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 660pF @ 600V |
Gate Charge (Qg) (Max) @ Vgs: | 30.4nC @ 15V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 15V |
Tiriskan untuk Sumber Tegangan (Vdss): | 900V |
Detil Deskripsi: | N-Channel 900V 35A (Tc) 125W (Tc) Through Hole TO-247-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 35A (Tc) |
Email: | [email protected] |