ZXMN10A08DN8TC
ZXMN10A08DN8TC
Modèle de produit:
ZXMN10A08DN8TC
Fabricant:
Diodes Incorporated
La description:
MOSFET 2N-CH 100V 1.6A 8SOIC
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
78761 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
ZXMN10A08DN8TC.pdf

introduction

We can supply ZXMN10A08DN8TC, use the request quote form to request ZXMN10A08DN8TC pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ZXMN10A08DN8TC.The price and lead time for ZXMN10A08DN8TC depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ZXMN10A08DN8TC.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-ZXMN10A08DN8TC
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:2V @ 250µA (Min)
Package composant fournisseur:8-SOP
Séries:-
Rds On (Max) @ Id, Vgs:250 mOhm @ 3.2A, 10V
Puissance - Max:1.25W
Emballage:Tape & Reel (TR)
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:405pF @ 50V
Charge de la porte (Qg) (Max) @ Vgs:7.7nC @ 10V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):100V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 100V 1.6A 1.25W Surface Mount 8-SOP
Courant - Drainage continu (Id) à 25 ° C:1.6A
Email:[email protected]

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