UNR422400A
UNR422400A
Modèle de produit:
UNR422400A
Fabricant:
Panasonic
La description:
TRANS PREBIAS NPN 300MW NS-B1
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
34919 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
UNR422400A.pdf

introduction

We can supply UNR422400A, use the request quote form to request UNR422400A pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number UNR422400A.The price and lead time for UNR422400A depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# UNR422400A.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-UNR422400A
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 100mA
Transistor Type:NPN - Pre-Biased
Package composant fournisseur:NS-B1
Séries:-
Résistance - Base de l'émetteur (R2):10 kOhms
Résistance - Base (R1):2.2 kOhms
Puissance - Max:300mW
Emballage:Cut Tape (CT)
Package / Boîte:NS-B1
Autres noms:UNR422400ACT
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:200MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole NS-B1
Gain en courant DC (hFE) (Min) @ Ic, Vce:60 @ 100mA, 10V
Courant - Collecteur Cutoff (Max):1µA
Courant - Collecteur (Ic) (max):500mA
Email:[email protected]

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