Français
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Suomi Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Svenska Ελλάδα Български език✕
À propos de nous | Nous contacter | Demander un devis |
Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > RSS125N03FU6TB
RSS125N03FU6TB
RSS125N03FU6TB
Modèle de produit:
RSS125N03FU6TB
Fabricant:
LAPIS Semiconductor
La description:
MOSFET N-CH 30V 12.5A 8SOIC
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
38265 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
RSS125N03FU6TB.pdf
Enquête

introduction

We can supply RSS125N03FU6TB, use the request quote form to request RSS125N03FU6TB pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RSS125N03FU6TB.The price and lead time for RSS125N03FU6TB depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RSS125N03FU6TB.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-RSS125N03FU6TB
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:8-SOP
Séries:-
Rds On (Max) @ Id, Vgs:8.9 mOhm @ 12.5A, 10V
Dissipation de puissance (max):2W (Ta)
Emballage:Tape & Reel (TR)
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Température de fonctionnement:150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1670pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:28nC @ 5V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4V, 10V
Tension drain-source (Vdss):30V
Description détaillée:N-Channel 30V 12.5A (Ta) 2W (Ta) Surface Mount 8-SOP
Courant - Drainage continu (Id) à 25 ° C:12.5A (Ta)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes

pièces connexes RSS125N03FU6TB

image Modèle de produit Fabricant La description Vue
RSS105N03TB Image RSS105N03TB LAPIS Semiconductor MOSFET N-CH 30V 10.5A 8-SOIC Enquête
RSS1E560MCN1GS Image RSS1E560MCN1GS Nichicon CAP ALUM POLY 56UF 20% 25V SMD Enquête
RSS105N03FU6TB Image RSS105N03FU6TB LAPIS Semiconductor MOSFET N-CH 30V 10.5A 8SOIC Enquête
RSS1C101MCN1GS Image RSS1C101MCN1GS Nichicon CAP ALUM POLY 100UF 20% 16V SMD Enquête
RSS100N03FU6TB Image RSS100N03FU6TB LAPIS Semiconductor MOSFET N-CH 30V 10A 8SOIC Enquête
RSS1E680MCN1GS Image RSS1E680MCN1GS Nichicon CAP ALUM POLY 68UF 20% 25V SMD Enquête
RSS1E270MCN1GS Nichicon CAP ALUM POLY 27UF 20% 25V SMD Enquête
RSS120N03TB Image RSS120N03TB LAPIS Semiconductor MOSFET N-CH 30V 12A 8-SOIC Enquête
RSS1E470MCN1GS Image RSS1E470MCN1GS Nichicon CAP ALUM POLY 47UF 20% 25V SMD Enquête
RSS1E100MCN1GS Image RSS1E100MCN1GS Nichicon CAP ALUM POLY 10UF 20% 25V SMD Enquête
RSS110N03FU6TB Image RSS110N03FU6TB LAPIS Semiconductor MOSFET N-CH 30V 11A 8SOIC Enquête
RSS100N03TB Image RSS100N03TB LAPIS Semiconductor MOSFET N-CH 30V 10A 8-SOIC Enquête
RSS0J331MCN1GS Image RSS0J331MCN1GS Nichicon CAP ALUM POLY 330UF 20% 6.3V SMD Enquête
RSS130N03FU6TB Image RSS130N03FU6TB LAPIS Semiconductor MOSFET N-CH 30V 13A 8SOIC Enquête
RSS125N03TB Image RSS125N03TB LAPIS Semiconductor MOSFET N-CH 30V 12.5A 8-SOIC Enquête
RSS120N03FU6TB Image RSS120N03FU6TB LAPIS Semiconductor MOSFET N-CH 30V 12A 8SOIC Enquête
RSS140N03TB Image RSS140N03TB LAPIS Semiconductor MOSFET N-CH 30V 14A 8-SOIC Enquête
RSS100N03FRATB Image RSS100N03FRATB LAPIS Semiconductor 4V DRIVE NCH MOSFET (CORRESPONDS Enquête
RSS110N03TB Image RSS110N03TB LAPIS Semiconductor MOSFET N-CH 30V 11A 8-SOIC Enquête
RSS1E220MCN1GS Image RSS1E220MCN1GS Nichicon CAP ALUM POLY 22UF 20% 25V SMD Enquête

Latest Nouvelles