NCD5701CDR2G
Modèle de produit:
NCD5701CDR2G
Fabricant:
ON Semiconductor
La description:
HIGH CURRENT IGBT GATE DRIVER
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
61497 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
NCD5701CDR2G.pdf

introduction

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Spécifications

Numéro de pièce interne RO-NCD5701CDR2G
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Alimentation:20V
Package composant fournisseur:8-SOIC
Séries:NCD5701
Rise / Fall Time (Typ):18ns, 19ns
Emballage:Tape & Reel (TR)
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:NCD5701CDR2GOSTR
Température de fonctionnement:-40°C ~ 150°C (TJ)
Nombre de conducteurs:1
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:4 Weeks
Tension logique - VIL, VIH:-
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type d'entrée:-
Type de porte:IGBT
Configuration pilotée:High-Side or Low-Side
Description détaillée:High-Side or Low-Side Gate Driver IC 8-SOIC
Current - Peak Output (Source, Évier):7.8A, 6.8A
courant de charge:Synchronous
Email:[email protected]

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