MMDF2N02ER2G
Modèle de produit:
MMDF2N02ER2G
Fabricant:
ON Semiconductor
La description:
MOSFET 2N-CH 25V 3.6A 8-SOIC
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
30731 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
MMDF2N02ER2G.pdf

introduction

We can supply MMDF2N02ER2G, use the request quote form to request MMDF2N02ER2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MMDF2N02ER2G.The price and lead time for MMDF2N02ER2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MMDF2N02ER2G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-MMDF2N02ER2G
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:3V @ 250µA
Package composant fournisseur:8-SOIC
Séries:-
Rds On (Max) @ Id, Vgs:100 mOhm @ 2.2A, 10V
Puissance - Max:2W
Emballage:Tape & Reel (TR)
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:MMDF2N02ER2GOS
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:532pF @ 16V
Charge de la porte (Qg) (Max) @ Vgs:30nC @ 10V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):25V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 25V 3.6A 2W Surface Mount 8-SOIC
Courant - Drainage continu (Id) à 25 ° C:3.6A
Email:[email protected]

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