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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - tableaux > LN100LA-G
LN100LA-G
Modèle de produit:
LN100LA-G
Fabricant:
Micrel / Microchip Technology
La description:
MOSFET 2N-CH 1200V
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
56562 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
LN100LA-G.pdf
Enquête

introduction

We can supply LN100LA-G, use the request quote form to request LN100LA-G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number LN100LA-G.The price and lead time for LN100LA-G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# LN100LA-G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-LN100LA-G
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:1.6V @ 10µA
Package composant fournisseur:6-LFGA (3x3)
Séries:-
Rds On (Max) @ Id, Vgs:3000 Ohm @ 2mA, 2.8V
Puissance - Max:350mW
Emballage:Tape & Reel (TR)
Package / Boîte:6-VFLGA
Température de fonctionnement:-25°C ~ 125°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:50pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:-
type de FET:2 N-Channel (Cascoded)
Fonction FET:Standard
Tension drain-source (Vdss):1200V (1.2kV)
Description détaillée:Mosfet Array 2 N-Channel (Cascoded) 1200V (1.2kV) 350mW Surface Mount 6-LFGA (3x3)
Courant - Drainage continu (Id) à 25 ° C:-
Email:[email protected]

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