IRLML6302GTRPBF
- Modèle de produit:
- IRLML6302GTRPBF
- La description:
- MOSFET P-CH 20V 0.78A SOT-23-3
- Statut RoHS:
- Sans plomb / conforme à la directive RoHS
- la quantité en dépôt:
- 86221 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- IRLML6302GTRPBF.pdf
introduction
We can supply IRLML6302GTRPBF, use the request quote form to request IRLML6302GTRPBF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRLML6302GTRPBF.The price and lead time for IRLML6302GTRPBF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRLML6302GTRPBF.We look forward to working with you to establish long-term relations of cooperation
Spécifications
| Numéro de pièce interne | RO-IRLML6302GTRPBF |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Tension - Test: | 97pF @ 15V |
| Tension - Ventilation: | Micro3™/SOT-23 |
| Vgs (th) (Max) @ Id: | 600 mOhm @ 610mA, 4.5V |
| Vgs (Max): | 2.7V, 4.5V |
| La technologie: | MOSFET (Metal Oxide) |
| Séries: | HEXFET® |
| État RoHS: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 780mA (Ta) |
| Polarisation: | TO-236-3, SC-59, SOT-23-3 |
| Autres noms: | IRLML6302GTRPBF-ND IRLML6302GTRPBFTR SP001550492 |
| Température de fonctionnement: | -55°C ~ 150°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Délai de livraison standard du fabricant: | 10 Weeks |
| Référence fabricant: | IRLML6302GTRPBF |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 3.6nC @ 4.5V |
| type de IGBT: | ±12V |
| Charge de la porte (Qg) (Max) @ Vgs: | 1.5V @ 250µA |
| Fonction FET: | P-Channel |
| Description élargie: | P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 |
| Tension drain-source (Vdss): | - |
| La description: | MOSFET P-CH 20V 0.78A SOT-23-3 |
| Courant - Drainage continu (Id) à 25 ° C: | 20V |
| Ratio de capacité: | 540mW (Ta) |
| Email: | [email protected] |
