IRF6710S2TR1PBF
- Modèle de produit:
- IRF6710S2TR1PBF
- La description:
- MOSFET N-CH 25V 12A DIRECTFET
- Statut RoHS:
- Sans plomb / conforme à la directive RoHS
- la quantité en dépôt:
- 41968 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- IRF6710S2TR1PBF.pdf
introduction
We can supply IRF6710S2TR1PBF, use the request quote form to request IRF6710S2TR1PBF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF6710S2TR1PBF.The price and lead time for IRF6710S2TR1PBF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRF6710S2TR1PBF.We look forward to working with you to establish long-term relations of cooperation
Spécifications
| Numéro de pièce interne | RO-IRF6710S2TR1PBF |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Vgs (th) (Max) @ Id: | 2.4V @ 25µA |
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | DIRECTFET S1 |
| Séries: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 12A, 10V |
| Dissipation de puissance (max): | 1.8W (Ta), 15W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Package / Boîte: | DirectFET™ Isometric S1 |
| Autres noms: | IRF6710S2TR1PBFTR SP001530274 |
| Température de fonctionnement: | -55°C ~ 175°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Statut sans plomb / Statut RoHS: | Lead free / RoHS Compliant |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 1190pF @ 13V |
| Charge de la porte (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 4.5V, 10V |
| Tension drain-source (Vdss): | 25V |
| Description détaillée: | N-Channel 25V 12A (Ta), 37A (Tc) 1.8W (Ta), 15W (Tc) Surface Mount DIRECTFET S1 |
| Courant - Drainage continu (Id) à 25 ° C: | 12A (Ta), 37A (Tc) |
| Email: | [email protected] |
