TSM2N60ECP ROG
TSM2N60ECP ROG
Artikelnummer:
TSM2N60ECP ROG
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET N-CHANNEL 600V 2A TO252
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
57833 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TSM2N60ECP ROG.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-TSM2N60ECP ROG
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-252, (D-Pak)
Serie:-
Rds On (Max) @ Id, Vgs:4 Ohm @ 1A, 10V
Verlustleistung (max):52.1W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:TSM2N60ECP ROGTR
TSM2N60ECP ROGTR-ND
TSM2N60ECPROGTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Hersteller Standard Vorlaufzeit:16 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:362pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:9.5nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 2A (Tc) 52.1W (Tc) Surface Mount TO-252, (D-Pak)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2A (Tc)
Email:[email protected]

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