TPC8031-H(TE12LQM)
Artikelnummer:
TPC8031-H(TE12LQM)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 30V 11A SOP8 2-6J1B
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
76089 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TPC8031-H(TE12LQM).pdf

Einführung

We can supply TPC8031-H(TE12LQM), use the request quote form to request TPC8031-H(TE12LQM) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPC8031-H(TE12LQM).The price and lead time for TPC8031-H(TE12LQM) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPC8031-H(TE12LQM).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-TPC8031-H(TE12LQM)
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.5V @ 1mA
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOP (5.5x6.0)
Serie:-
Rds On (Max) @ Id, Vgs:13.3 mOhm @ 5.5A, 10V
Verlustleistung (max):-
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.173", 4.40mm Width)
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 11A (Ta) Surface Mount 8-SOP (5.5x6.0)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11A (Ta)
Email:[email protected]

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