STS8DN3LLH5
STS8DN3LLH5
Artikelnummer:
STS8DN3LLH5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET 2N-CH 30V 10A 8SO
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
30906 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
STS8DN3LLH5.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-STS8DN3LLH5
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:8-SO
Serie:STripFET™ V
Rds On (Max) @ Id, Vgs:19 mOhm @ 5A, 10V
Leistung - max:2.7W
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:497-10391-6
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:724pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:5.4nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 10A 2.7W Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:10A
Basisteilenummer:ST*8DN
Email:[email protected]

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