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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > R6020ANX
R6020ANX
R6020ANX
Artikelnummer:
R6020ANX
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CH 600V 20A TO-220FM
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
40948 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
R6020ANX.pdf
Anfrage

Einführung

We can supply R6020ANX, use the request quote form to request R6020ANX pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number R6020ANX.The price and lead time for R6020ANX depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# R6020ANX.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-R6020ANX
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4.5V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220FM
Serie:-
Rds On (Max) @ Id, Vgs:220 mOhm @ 10A, 10V
Verlustleistung (max):50W (Tc)
Verpackung:Bulk
Verpackung / Gehäuse:TO-220-3 Full Pack
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2040pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 20A (Ta) 50W (Tc) Through Hole TO-220FM
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Ta)
Email:[email protected]

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