NTD4959NHT4G
NTD4959NHT4G
Artikelnummer:
NTD4959NHT4G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 9A TP-FA
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
49227 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NTD4959NHT4G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NTD4959NHT4G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DPAK
Serie:-
Rds On (Max) @ Id, Vgs:9 mOhm @ 30A, 10V
Verlustleistung (max):1.3W (Ta), 52W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2155pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:44nC @ 11.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 11.5V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 9A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Surface Mount DPAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9A (Ta), 58A (Tc)
Email:[email protected]

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