NTD4857NA-1G
NTD4857NA-1G
Artikelnummer:
NTD4857NA-1G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 25V 78A SGL IPAK
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
57207 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NTD4857NA-1G.pdf

Einführung

We can supply NTD4857NA-1G, use the request quote form to request NTD4857NA-1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTD4857NA-1G.The price and lead time for NTD4857NA-1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTD4857NA-1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-NTD4857NA-1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.5V @ 250µA
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:I-PAK
Serie:-
Rds On (Max) @ Id, Vgs:5.7 mOhm @ 30A, 10V
Verlustleistung (max):-
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3 Short Leads, IPak, TO-251AA
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1960pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:N-Channel 25V 12A (Ta), 78A (Tc) Through Hole I-PAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A (Ta), 78A (Tc)
Email:[email protected]

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