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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFH6N90
IXFH6N90
IXFH6N90
Artikelnummer:
IXFH6N90
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 900V 6A TO-247AD
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
87773 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFH6N90.pdf
Anfrage

Einführung

We can supply IXFH6N90, use the request quote form to request IXFH6N90 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFH6N90.The price and lead time for IXFH6N90 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFH6N90.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IXFH6N90
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4.5V @ 2.5mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247AD (IXFH)
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:2 Ohm @ 3A, 10V
Verlustleistung (max):300W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:130nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):900V
detaillierte Beschreibung:N-Channel 900V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6A (Tc)
Email:[email protected]

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