FDS5672_F095
FDS5672_F095
Artikelnummer:
FDS5672_F095
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
36136 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
FDS5672_F095.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-FDS5672_F095
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SO
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:10 mOhm @ 12A, 10V
Verlustleistung (max):2.5W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):6V, 10V
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A (Tc)
Email:[email protected]

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