FDG6304P-F169
Artikelnummer:
FDG6304P-F169
Hersteller:
ON Semiconductor
Beschreibung:
INTEGRATED CIRCUIT
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
59523 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
FDG6304P-F169.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-FDG6304P-F169
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1.5V @ 250µA
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:-
Rds On (Max) @ Id, Vgs:1.1 Ohm @ 410mA, 4.5V
Leistung - max:300mW
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:62pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V
Typ FET:2 P-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:Mosfet Array 2 P-Channel (Dual) 25V 410mA (Ta) 300mW Surface Mount SC-88/SC70-6/SOT-363
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:410mA (Ta)
Email:[email protected]

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