FDB6030L
FDB6030L
Artikelnummer:
FDB6030L
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 48A D2PAK
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
77127 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
FDB6030L.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-FDB6030L
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-263AB
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:13 mOhm @ 26A, 10V
Verlustleistung (max):52W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Betriebstemperatur:-65°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1250pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 48A (Ta) 52W (Tc) Surface Mount TO-263AB
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:48A (Ta)
Email:[email protected]

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