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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-IGBTs-Einzel > APT75GP120B2G
APT75GP120B2G
APT75GP120B2G
Artikelnummer:
APT75GP120B2G
Hersteller:
Microsemi
Beschreibung:
IGBT 1200V 100A 1042W TMAX
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
85880 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.APT75GP120B2G.pdf2.APT75GP120B2G.pdf
Anfrage

Einführung

We can supply APT75GP120B2G, use the request quote form to request APT75GP120B2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT75GP120B2G.The price and lead time for APT75GP120B2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT75GP120B2G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-APT75GP120B2G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):1200V
VCE (on) (Max) @ Vge, Ic:3.9V @ 15V, 75A
Testbedingung:600V, 75A, 5 Ohm, 15V
Td (ein / aus) bei 25 ° C:20ns/163ns
Schaltenergie:1620µJ (on), 2500µJ (off)
Serie:POWER MOS 7®
Leistung - max:1042W
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3 Variant
Andere Namen:APT75GP120B2GMI
APT75GP120B2GMI-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:23 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:PT
Gate-Ladung:320nC
detaillierte Beschreibung:IGBT PT 1200V 100A 1042W Through Hole
Strom - Collector Pulsed (Icm):300A
Strom - Kollektor (Ic) (max):100A
Email:[email protected]

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