1N5407G A0G
1N5407G A0G
Artikelnummer:
1N5407G A0G
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
DIODE GEN PURP 800V 3A DO201AD
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
50823 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1N5407G A0G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-1N5407G A0G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Forward (Vf) (Max) @ If:1V @ 3A
Spannung - Sperr (Vr) (max):800V
Supplier Device-Gehäuse:DO-201AD
Geschwindigkeit:Standard Recovery >500ns, > 200mA (Io)
Serie:-
Verpackung:Tape & Box (TB)
Verpackung / Gehäuse:DO-201AD, Axial
Andere Namen:1N5407G A0GTB
1N5407G A0GTB-ND
1N5407GA0GTB
Betriebstemperatur - Anschluss:-55°C ~ 150°C
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:12 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Diodentyp:Standard
detaillierte Beschreibung:Diode Standard 800V 3A Through Hole DO-201AD
Strom - Sperrleckstrom @ Vr:5µA @ 800V
Strom - Richt (Io):3A
Kapazität @ Vr, F:25pF @ 4V, 1MHz
Email:[email protected]

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