BSP315PH6327XTSA1
BSP315PH6327XTSA1
Onderdeel nummer:
BSP315PH6327XTSA1
Fabrikant:
International Rectifier (Infineon Technologies)
Beschrijving:
MOSFET P-CH 60V 1.17A SOT-223
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
45116 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
BSP315PH6327XTSA1.pdf

Invoering

We can supply BSP315PH6327XTSA1, use the request quote form to request BSP315PH6327XTSA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSP315PH6327XTSA1.The price and lead time for BSP315PH6327XTSA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSP315PH6327XTSA1.We look forward to working with you to establish long-term relations of cooperation

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Intern onderdeelnummer RO-BSP315PH6327XTSA1
Staat Original New
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Vervanging See datasheet
Voltage - Test:160pF @ 25V
Voltage - Breakdown:PG-SOT223-4
VGS (th) (Max) @ Id:800 mOhm @ 1.17A, 10V
Vgs (Max):4.5V, 10V
Technologie:MOSFET (Metal Oxide)
Serie:SIPMOS®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, VGS:1.17A (Ta)
Polarisatie:TO-261-4, TO-261AA
Andere namen:BSP315PH6327XTSA1TR
SP001058830
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:10 Weeks
Fabrikant Onderdeelnummer:BSP315PH6327XTSA1
Input Capacitance (Ciss) (Max) @ Vds:7.8nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:2V @ 160µA
FET Feature:P-Channel
Uitgebreide beschrijving:P-Channel 60V 1.17A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Drain naar de Bron Voltage (Vdss):-
Beschrijving:MOSFET P-CH 60V 1.17A SOT-223
Current - Continuous Drain (Id) @ 25 ° C:60V
capacitieve Ratio:1.8W (Ta)
Email:[email protected]

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