On October 8th, according to the German media ComputerBase, Samsung introduced its memory roadmap in Samsung Foundry Forum 2022.

As shown in the figure above, in the upcoming 2023, Samsung will enter the 1BNM process stage, the memory chip capacity will reach 24GB (3GB)-32GB (4GB), and the native speed will be 6.4-7.2Gbps. In terms of memory, the new generation of GDDR7 video memory will come out next year, so the mid -term modification of the new generation graphics card of AMD and Nvidia graphics may use GDDR7 video memory.

In addition, Samsung also carried out some long -term ideas, such as the launch of DDR6 memory in 2026, and the speed of native 10Gbps in 2027.

Samsung also announced its flash map, and is expected to launch the V9 NAND chip in 2024.

IT House has reported that Samsung pointed out in the previous Tech Day 2022 that its ninth generation V-NAND is under development and is planned to mass production in 2024. By 2030, Samsung imagine NAND stacking more than 1,000 layers to better support future data dense technology. Samsung also announced that the world's highest capacity 1TB TLC V-NAND will be provided to customers at the end of this year.