SIE812DF-T1-E3
SIE812DF-T1-E3
Part Number:
SIE812DF-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 40V 60A 10-POLARPAK
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
36897 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
SIE812DF-T1-E3.pdf

Introduction

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Specifications

Internal Part Number RO-SIE812DF-T1-E3
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Voltage - Test:8300pF @ 20V
Voltage - Breakdown:10-PolarPAK® (L)
Vgs(th) (Max) @ Id:2.6 mOhm @ 25A, 10V
Technology:MOSFET (Metal Oxide)
Series:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:60A (Tc)
Polarization:10-PolarPAK® (L)
Other Names:SIE812DF-T1-E3TR
SIE812DFT1E3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Manufacturer Part Number:SIE812DF-T1-E3
Input Capacitance (Ciss) (Max) @ Vds:170nC @ 10V
Gate Charge (Qg) (Max) @ Vgs:3V @ 250µA
FET Feature:N-Channel
Expanded Description:N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 40V 60A 10-POLARPAK
Current - Continuous Drain (Id) @ 25°C:40V
Capacitance Ratio:5.2W (Ta), 125W (Tc)
Email:[email protected]

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