Nomor Bagian Internal | RO-IDH08G65C5XKSA1 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Tegangan - Puncak terbalik (Max): | Silicon Carbide Schottky |
Tegangan - Forward (Vf) (Max) @ Jika: | 8A (DC) |
Tegangan - Breakdown: | PG-TO220-2 |
Seri: | thinQ!™ |
Status RoHS: | Tube |
Sebaliknya Pemulihan Waktu (trr): | No Recovery Time > 500mA (Io) |
Resistance @ Jika, F: | 250pF @ 1V, 1MHz |
Polarisasi: | TO-220-2 |
Nama lain: | IDH08G65C5 IDH08G65C5-ND SP000925204 |
Suhu Operasional - Junction: | 0ns |
mount Jenis: | Through Hole |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Nomor Bagian Produsen: | IDH08G65C5XKSA1 |
Deskripsi yang Diperluas: | Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole PG-TO220-2 |
Konfigurasi diode: | 280µA @ 650V |
Deskripsi: | DIODE SCHOTTKY 650V 8A TO220-2 |
Saat ini - Reverse Kebocoran @ Vr: | 1.7V @ 8A |
Saat ini - rata Rectified (Io) (per Diode): | 650V |
Kapasitansi @ Vr, F: | -55°C ~ 175°C |
Email: | [email protected] |