IPC100N04S51R2ATMA1
IPC100N04S51R2ATMA1
Modèle de produit:
IPC100N04S51R2ATMA1
Fabricant:
International Rectifier (Infineon Technologies)
La description:
MOSFET N-CH 40V 100A 8TDFN
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
70861 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
IPC100N04S51R2ATMA1.pdf

introduction

We can supply IPC100N04S51R2ATMA1, use the request quote form to request IPC100N04S51R2ATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPC100N04S51R2ATMA1.The price and lead time for IPC100N04S51R2ATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPC100N04S51R2ATMA1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-IPC100N04S51R2ATMA1
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Test:7650pF @ 25V
Tension - Ventilation:PG-TDSON-8-34
Vgs (th) (Max) @ Id:1.2 mOhm @ 50A, 10V
Vgs (Max):7V, 10V
La technologie:MOSFET (Metal Oxide)
Séries:OptiMOS™, Automotive, AEC-Q101
État RoHS:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:100A
Polarisation:8-PowerTDFN
Autres noms:IPC100N04S51R2ATMA1TR
SP001262620
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:16 Weeks
Référence fabricant:IPC100N04S51R2ATMA1
Capacité d'entrée (Ciss) (Max) @ Vds:131nC @ 10V
type de IGBT:±20V
Charge de la porte (Qg) (Max) @ Vgs:3.5V @ 90µA
Fonction FET:N-Channel
Description élargie:N-Channel 40V 100A 150W (Tc) Surface Mount PG-TDSON-8-34
Tension drain-source (Vdss):-
La description:MOSFET N-CH 40V 100A 8TDFN
Courant - Drainage continu (Id) à 25 ° C:40V
Ratio de capacité:150W (Tc)
Email:[email protected]

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