IDH10G65C5ZXKSA1
- Modèle de produit:
- IDH10G65C5ZXKSA1
- La description:
- DIODE SCHOTTKY 650V 10A TO220-2
- Statut RoHS:
- Sans plomb / conforme à la directive RoHS
- la quantité en dépôt:
- 81202 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- IDH10G65C5ZXKSA1.pdf
introduction
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Spécifications
| Numéro de pièce interne | RO-IDH10G65C5ZXKSA1 |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Tension - Inverse de crête (max): | Silicon Carbide Schottky |
| Tension - directe (Vf) (max) @ Si: | 10A (DC) |
| Tension - Ventilation: | PG-TO220-2 |
| Séries: | thinQ!™ |
| Temps de recouvrement inverse (trr): | No Recovery Time > 500mA (Io) |
| Résistance @ Si, F: | 300pF @ 1V, 1MHz |
| Polarisation: | TO-220-2 |
| Autres noms: | SP001128936 |
| Température d'utilisation - Jonction: | 0ns |
| Type de montage: | Through Hole |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Référence fabricant: | IDH10G65C5ZXKSA1 |
| Description élargie: | Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole PG-TO220-2 |
| Configuration diode: | 180µA @ 650V |
| La description: | DIODE SCHOTTKY 650V 10A TO220-2 |
| Courant - fuite, inverse à Vr: | 1.7V @ 10A |
| Courant - Moyen redressé (Io) (par diode): | 650V |
| Capacité à Vr, F: | -55°C ~ 175°C |
| Email: | [email protected] |
