DSK10B-AT1
DSK10B-AT1
Modèle de produit:
DSK10B-AT1
Fabricant:
ON Semiconductor
La description:
DIODE GEN PURP 100V 1A AXIAL
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
45787 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
DSK10B-AT1.pdf

introduction

We can supply DSK10B-AT1, use the request quote form to request DSK10B-AT1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DSK10B-AT1.The price and lead time for DSK10B-AT1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DSK10B-AT1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-DSK10B-AT1
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Inverse de crête (max):Standard
Tension - directe (Vf) (max) @ Si:1A
Tension - Ventilation:-
Séries:-
État RoHS:Tape & Reel (TR)
Temps de recouvrement inverse (trr):Standard Recovery >500ns, > 200mA (Io)
Résistance @ Si, F:-
Polarisation:Axial
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:DSK10B-AT1
Description élargie:Diode Standard 100V 1A Through Hole
Configuration diode:10µA @ 100V
La description:DIODE GEN PURP 100V 1A AXIAL
Courant - fuite, inverse à Vr:1.1V @ 1A
Courant - Moyen redressé (Io) (par diode):100V
Capacité à Vr, F:150°C (Max)
Email:[email protected]

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