BSC037N08NS5ATMA1
- Modèle de produit:
- BSC037N08NS5ATMA1
- La description:
- MOSFET N-CH 80V 100A 8TDSON
- Statut RoHS:
- Sans plomb / conforme à la directive RoHS
- la quantité en dépôt:
- 84214 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- BSC037N08NS5ATMA1.pdf
introduction
We can supply BSC037N08NS5ATMA1, use the request quote form to request BSC037N08NS5ATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSC037N08NS5ATMA1.The price and lead time for BSC037N08NS5ATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSC037N08NS5ATMA1.We look forward to working with you to establish long-term relations of cooperation
Spécifications
| Numéro de pièce interne | RO-BSC037N08NS5ATMA1 |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Tension - Test: | 4200pF @ 40V |
| Tension - Ventilation: | PG-TDSON-8 |
| Vgs (th) (Max) @ Id: | 3.7 mOhm @ 50A, 10V |
| Vgs (Max): | 6V, 10V |
| La technologie: | MOSFET (Metal Oxide) |
| Séries: | OptiMOS™ |
| État RoHS: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 100A (Tc) |
| Polarisation: | 8-PowerTDFN |
| Autres noms: | BSC037N08NS5ATMA1-ND BSC037N08NS5ATMA1TR SP001294988 |
| Température de fonctionnement: | -55°C ~ 150°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Délai de livraison standard du fabricant: | 16 Weeks |
| Référence fabricant: | BSC037N08NS5ATMA1 |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 58nC @ 10V |
| type de IGBT: | ±20V |
| Charge de la porte (Qg) (Max) @ Vgs: | 3.8V @ 72µA |
| Fonction FET: | N-Channel |
| Description élargie: | N-Channel 80V 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8 |
| Tension drain-source (Vdss): | - |
| La description: | MOSFET N-CH 80V 100A 8TDSON |
| Courant - Drainage continu (Id) à 25 ° C: | 80V |
| Ratio de capacité: | 2.5W (Ta), 114W (Tc) |
| Email: | [email protected] |
