BSC028N06NSATMA1
BSC028N06NSATMA1
Modèle de produit:
BSC028N06NSATMA1
Fabricant:
International Rectifier (Infineon Technologies)
La description:
MOSFET N-CH 60V 23A TDSON-8
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
75033 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
BSC028N06NSATMA1.pdf

introduction

We can supply BSC028N06NSATMA1, use the request quote form to request BSC028N06NSATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSC028N06NSATMA1.The price and lead time for BSC028N06NSATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSC028N06NSATMA1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-BSC028N06NSATMA1
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Test:2700pF @ 30V
Tension - Ventilation:PG-TDSON-8
Vgs (th) (Max) @ Id:2.8 mOhm @ 50A, 10V
Vgs (Max):6V, 10V
La technologie:MOSFET (Metal Oxide)
Séries:OptiMOS™
État RoHS:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:23A (Ta), 100A (Tc)
Polarisation:8-PowerTDFN
Autres noms:BSC028N06NSATMA1TR
BSC028N06NSTR
BSC028N06NSTR-ND
SP000917416
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:16 Weeks
Référence fabricant:BSC028N06NSATMA1
Capacité d'entrée (Ciss) (Max) @ Vds:37nC @ 10V
type de IGBT:±20V
Charge de la porte (Qg) (Max) @ Vgs:2.8V @ 50µA
Fonction FET:N-Channel
Description élargie:N-Channel 60V 23A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8
Tension drain-source (Vdss):-
La description:MOSFET N-CH 60V 23A TDSON-8
Courant - Drainage continu (Id) à 25 ° C:60V
Ratio de capacité:2.5W (Ta), 83W (Tc)
Email:[email protected]

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