IPP023NE7N3 G
- Osa numero:
- IPP023NE7N3 G
- Kuvaus:
- MOSFET N-CH 75V 120A TO220
- RoHS-tila:
- Lyijytön / RoHS -yhteensopiva
- Määrä varastossa:
- 84902 Pieces
- Toimitusaika:
- 1-2 days (We have stocks to ship now)
- Tuotantoaika:
- 4-8 weeks
- Tietolomake:
- IPP023NE7N3 G.pdf
esittely
We can supply IPP023NE7N3 G, use the request quote form to request IPP023NE7N3 G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPP023NE7N3 G.The price and lead time for IPP023NE7N3 G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPP023NE7N3 G.We look forward to working with you to establish long-term relations of cooperation
tekniset tiedot
| Sisäinen osanumero | RO-IPP023NE7N3 G |
|---|---|
| Kunto | Original New |
| Maa alkuperä | Contact us |
| Alkuun Merkintä | email us |
| Korvaus | See datasheet |
| Jännite - Testi: | 14400pF @ 37.5V |
| Jännite - Breakdown: | - |
| Vgs (th) (Max) @ Id: | 2.3 mOhm @ 100A, 10V |
| teknologia: | MOSFET (Metal Oxide) |
| Sarja: | OptiMOS™ |
| RoHS-tila: | Cut Tape (CT) |
| RDS (Max) @ Id, Vgs: | 120A (Tc) |
| Polarisaatio: | TO-220-3 |
| Muut nimet: | IPP023NE7N3 GCT |
| Käyttölämpötila: | -55°C ~ 175°C (TJ) |
| Asennustyyppi: | Through Hole |
| Kosteuden herkkyys (MSL): | 1 (Unlimited) |
| Valmistajan osanumero: | IPP023NE7N3 G |
| Tulo Kapasitanssi (Ciss) (Max) @ Vds: | 206nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 3.8V @ 273µA |
| FET Ominaisuus: | N-Channel |
| Laajennettu kuvaus: | N-Channel 75V 120A (Tc) 300W (Tc) Through Hole |
| Valua lähde jännite (Vdss): | - |
| Kuvaus: | MOSFET N-CH 75V 120A TO220 |
| Virta - Jatkuva tyhjennys (Id) @ 25 ° C: | 75V |
| kapasitanssi Ratio: | 300W (Tc) |
| Email: | [email protected] |
