2N7002H6327XTSA2
- Osa numero:
- 2N7002H6327XTSA2
- Kuvaus:
- MOSFET N-CH 60V 0.3A SOT363
- RoHS-tila:
- Lyijytön / RoHS -yhteensopiva
- Määrä varastossa:
- 52633 Pieces
- Toimitusaika:
- 1-2 days (We have stocks to ship now)
- Tuotantoaika:
- 4-8 weeks
- Tietolomake:
- 2N7002H6327XTSA2.pdf
esittely
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tekniset tiedot
| Sisäinen osanumero | RO-2N7002H6327XTSA2 |
|---|---|
| Kunto | Original New |
| Maa alkuperä | Contact us |
| Alkuun Merkintä | email us |
| Korvaus | See datasheet |
| Jännite - Testi: | 20pF @ 25V |
| Jännite - Breakdown: | PG-SOT23-3 |
| Vgs (th) (Max) @ Id: | 3 Ohm @ 500mA, 10V |
| Vgs (Max): | 4.5V, 10V |
| teknologia: | MOSFET (Metal Oxide) |
| Sarja: | OptiMOS™ |
| RoHS-tila: | Tape & Reel (TR) |
| RDS (Max) @ Id, Vgs: | 300mA (Ta) |
| Polarisaatio: | TO-236-3, SC-59, SOT-23-3 |
| Muut nimet: | 2N7002H6327XTSA2TR SP000929182 |
| Käyttölämpötila: | -55°C ~ 150°C (TJ) |
| Asennustyyppi: | Surface Mount |
| Kosteuden herkkyys (MSL): | 1 (Unlimited) |
| Valmistajan toimitusaika: | 10 Weeks |
| Valmistajan osanumero: | 2N7002H6327XTSA2 |
| Tulo Kapasitanssi (Ciss) (Max) @ Vds: | 0.6nC @ 10V |
| IGBT Tyyppi: | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
| FET Ominaisuus: | N-Channel |
| Laajennettu kuvaus: | N-Channel 60V 300mA (Ta) 500mW (Ta) Surface Mount PG-SOT23-3 |
| Valua lähde jännite (Vdss): | - |
| Kuvaus: | MOSFET N-CH 60V 0.3A SOT363 |
| Virta - Jatkuva tyhjennys (Id) @ 25 ° C: | 60V |
| kapasitanssi Ratio: | 500mW (Ta) |
| Email: | [email protected] |
