RN2110ACT(TPL3)
RN2110ACT(TPL3)
Artikelnummer:
RN2110ACT(TPL3)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS PREBIAS PNP 0.1W CST3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
50962 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
RN2110ACT(TPL3).pdf

Einführung

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Spezifikation

Interne Teilenummer RO-RN2110ACT(TPL3)
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:150mV @ 250µA, 5mA
Transistor-Typ:PNP - Pre-Biased
Supplier Device-Gehäuse:CST3
Serie:-
Widerstand - Basis (R1):4.7 kOhms
Leistung - max:100mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-101, SOT-883
Andere Namen:RN2110ACT(TPL3)TR
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 100mW Surface Mount CST3
DC Stromgewinn (HFE) (Min) @ Ic, VCE:120 @ 1mA, 5V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):80mA
Email:[email protected]

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