NJVMJB41CT4G
NJVMJB41CT4G
Artikelnummer:
NJVMJB41CT4G
Hersteller:
ON Semiconductor
Beschreibung:
TRANS NPN 100V 6A D2PAK-3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
90123 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NJVMJB41CT4G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NJVMJB41CT4G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):6A
Spannung - Durchschlag:D2PAK-3
VCE Sättigung (Max) @ Ib, Ic:100V
Serie:-
RoHS Status:Tape & Reel (TR)
Widerstand - Base (R1) (Ohm):3MHz
Leistung - max:2W
Polarisation:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere Namen:NJVMJB41CT4G-ND
Betriebstemperatur:-65°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsstufe (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:28 Weeks
Hersteller-Teilenummer:NJVMJB41CT4G
Frequenz - Übergang:15 @ 3A, 4V
Expanded Beschreibung:Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D2PAK-3
Beschreibung:TRANS NPN 100V 6A D2PAK-3
DC Stromgewinn (HFE) (Min) @ Ic, VCE:700µA
Strom - Collector Cutoff (Max):1.5V @ 600mA, 6A
Strom - Kollektor (Ic) (max):NPN
Email:[email protected]

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