SUP85N10-10-GE3
SUP85N10-10-GE3
型號:
SUP85N10-10-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET N-CH 100V 85A TO220AB
RoHS狀態:
無鉛/符合RoHS
庫存數量:
87995 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
1.SUP85N10-10-GE3.pdf2.SUP85N10-10-GE3.pdf

簡單介紹

We can supply SUP85N10-10-GE3, use the request quote form to request SUP85N10-10-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SUP85N10-10-GE3.The price and lead time for SUP85N10-10-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SUP85N10-10-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SUP85N10-10-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
電壓 - 測試:6550pF @ 25V
VGS(TH)(最大)@標識:10.5 mOhm @ 30A, 10V
Vgs(最大):4.5V, 10V
技術:MOSFET (Metal Oxide)
系列:TrenchFET®
RoHS狀態:Digi-Reel®
RDS(ON)(最大值)@標識,柵極電壓:85A (Tc)
極化:TO-220-3
其他名稱:SUP85N10-10-GE3DKR
工作溫度:-55°C ~ 175°C (TJ)
安裝類型:Through Hole
濕度敏感度(MSL):1 (Unlimited)
製造商標準交貨期:24 Weeks
製造商零件編號:SUP85N10-10-GE3
輸入電容(Ciss)(Max)@ Vds:160nC @ 10V
IGBT類型:±20V
柵極電荷(Qg)(Max)@ Vgs:3V @ 250µA
FET特點:N-Channel
展開說明:N-Channel 100V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole
漏極至源極電壓(Vdss):-
描述:MOSFET N-CH 100V 85A TO220AB
電流 - 25°C連續排水(Id):100V
電容比:3.75W (Ta), 250W (Tc)
Email:[email protected]

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