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Vishay's new symmetrical dual -channel MOSFET can greatly save the system area and simplify the design

  • Author:ROGER
  • Release on:2023-03-14

Vishay IntertechNology, Inc. (NYSE stock market code: VSH) announced that two new 30 V-symmetrical dual-channel N-channel power MOSFET --- SIZF5300DT and SIZF5302DT are combined with high-side and low-side TRENCHFET Gen V MosFet.3.3 mm PowerPair 3X3FS monomer packaging.Vishay Siliconix Sizf5300DT and Sizf5302DT are suitable for computing and communication application power conversion. While increasing energy efficiency, the number of components is reduced and the design is simplified.

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The dual -channel MOSFET released a few days ago can be used to replace the two PowerPak 1212 packaging separate devices, saving 50%substrate space, and the occupying area is reduced by 63%compared with PowerPair 6x5F packaging dual MOSFET.MOSFET provides a space-saving solution for the USB-C power laptop, server, DC cooling fan, and communication equipment synchronous antihypertensive converter, load point (POL) conversion circuit and DC/DC module designers.Among these applications, the Sizf5302DT high and low side MOSFET provides a 50%high -quality effect of duty cycle and excellent energy efficiency, especially under 1 A to 4 A current conditions.Sizf5300DT is an ideal solution from 12 A to 15 A.

Sizf5300DT and Sizf5302DT use Vishay's 30 V Gen V technology to achieve excellent lead resistance and gate charges.The typical guide resistors of Sizf5300DT 10 V and 4.5 V are 2.02 mW and 2.93 mW, respectively, and the guidance resistance is 2.7 mW and 4.4 mW under the same conditions of SIZF5302DT.Two MOSFET 4.5 V conditions are 9.5 nc and 6.7 nc, respectively.Ultra -low -conducting resistance and grid charging accumulation, that is, MOSFET power conversion application important superiority coefficient (FOM), which is 35 %lower than the previous generation solutions of similar lead resistors.The efficiency of high -frequency switching application is 2%, and 100 W energy efficiency reaches 98%.

Compared with previous generation solutions

Technical specifications / device number

SIZF5302DT

(Gen v)

Previous solution

(Gen IV)

SIZF5302DT compares of previous generation solutions

Encapsulate

PowerPair 3X3FS

PowerPair 6X5F

63 %↓

VDS (v)

30

30

RDS (on) typical value

@ 4.5 v (mw)

4.4 (Channel 1)

4.4 (Channel 2)

4.0 (Channel 1)

1.2 (Channel 2)

Qg @ 4.5 v (nc)

6.7 (Channel 1)

6.7 (Channel 2)

11 (Channel 1)

46 (Channel 2)

Fom (m?*Nc)

29 (Channel 1)

29 (Channel 2)

44 (Channel 1)

54 (Channel 2)

35 % ↓

46 % ↓

efficiency

@ 20 VIN / 12.5 VOUT /

800 kHz / 100 W

98 %

96 %

2 %↑

The device uses inverted chip technology to enhance the heat dissipation capacity. Unique pins configuration helps simplify the PCB layout, support shortening the switching circuit, thereby reducing the parasitic inductance.Sizf5300DT and Sizf5302DT are tested by 100% RG and UIS, which meets ROHS standards and has no halogen.

Device specification table:

Product number

Sizf5300dt

SIZF5302DT

VDS (v)

30

30

VGS (v)

+ 16 / -12

+ 16 / -12

RDS (on) typical value (m?) @

10 V

2.02

2.7

4.5 V V

2.93

4.4

QG (typical value) @ 4.5 v (nc)

9.5

6.7

ID (a) @

TA = 25 ° C

125

100

TA = 70 ° C

100

80

Sizf5300DT and Sizf5302DT can now provide samples and mass production.Please contact or send an email to [email protected] for the supply cycle information.