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Toshiba launches intelligent power devices that help reduce the area of installation area

  • Author:ROGER
  • Release on:2023-03-14

Toshiba Electronic Component and Storage Device Co., Ltd. ("Toshiba") announced the launch of two smart power devices-"TPD2015FN" and "TPD2017FN" for control motor, threading tube, lamps and other applications (such as industrial equipment (such as industrial equipment (such as industrial equipmentDriver of perceptual load used in programming logic control).The high -edge switch (8 channels) "TPD2015FN" and the low -edge switch (8 channels) "TPD2017FN" have been shipped today.

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The new product uses Toshiba's analog device integration process (BICD) [1] to achieve a 0.4Ω (typical value) conduction resistance, which is more than 50%lower than the existing product [2].Both TPD2015FN and TPD2017FN use ssop30 packaging [3]. Its installed area is about 71%of the existing products [2] SSOP24 [4]. The height is 80%of the SSOP24 packaging, and the pitch spacing is reduced to 0.65mm.These improvements are conducive to narrowing the design size.

The highest working temperature of the new product is 110 ° C, which is higher than the existing product [2] 85 ° C, which supports applications with higher work temperature.In addition, the two new products have built -in overcurrent protection and overheating protection circuits, which helps improve the reliability of design.

application:

-EM programmable logic controller

-Deon machine tool

-Forcorrhea / server

-IO-LINK control device

characteristic:

-The built -in N -channel MOSFET (8 channels) and single chip ICs that control circuits

(TPD2015FN has a built -in charge pump.)

-Addd SSOP30 packaging, which is equivalent to about 71%of SSOP24 packaging

-Built -in protection function (overheating, overcurrent)

-The work temperature: TOPR (maximum value) = 110 ℃

-The low -guide resistance: RDS (on) = 0.4? (Typical value)@vin = 5V, TJ = 25 ℃, iOut = 0.5A

Main specifications:

(Unless there are other instructions,@ta = 25 ℃)

Device model

TPD2015FN

TPD2017FN

Encapsulate

Ssop30

Absolute maximum rated value

Power supply voltage VDD (V)

-0.3 to 40.0

-0.3 to 6.0

Input voltage vin (v)

-0.3 to 6.0

VDDX-OUTX resistance VDSS (V)--

50.0

-

Output resistance VOUT (V)

-

50.0

Output current iOUT (a)

Internal restriction

Power dissipation PD (W)

1.8

Work temperature TOPR (℃)

-40 to 110

Jie temperature TJ (℃)

150

Storage temperature TSTG (℃)

-55 to 150

The scope of work

Work power supply voltage VDD (OPR) (V) (V)

@Tj = 25 ℃

8 to 40

2.7 to 5.5

Electrical characteristics

Typical value (ω) of the guide resistance RDS (on)

@VDD = 12V (TPD2015FN)

/ 5V (TPD2017FN),

Vin = 5V,

IOUT = 0.5A, TJ = 25 ℃

0.40

Output quantity

8

Protective function

Heat

Overcurrent protection

Inventory query and purchase

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Note:

[1] Double pole CMOS-DMOS

[2] Toshiba's existing products: TPD2005F and TPD2007F
[3] SSOP30 package: 9.7mm × 7.6mm × 1.2mm (typical value)
[4] SSOP24 package: 13.0mm × 8.0mm × 1.5mm (typical value)

For more information about related new products, visit the following website:

TPD2015FN

https://toshipshiba-semicon-storage.com/cn/semiconductor/product/optoelectronics/detail.tpd2015fn.html

TPD2017FN

https://toship

To learn about the application information of TPD2017FN, visit the following URL:

TPD2017FN application description

https://toship