STD16N65M2
- Nomor bagian:
- STD16N65M2
- Pabrikan:
- STMicroelectronics
- Deskripsi:
- MOSFET N-CH 650V 11A DPAK
- Status RoHS:
- Memimpin bebas / RoHS Compliant
- Jumlah dalam Stok:
- 89718 Pieces
- Waktu pengiriman:
- 1-2 days (We have stocks to ship now)
- Waktu produksi:
- 4-8 weeks
- Lembaran data:
- STD16N65M2.pdf
pengantar
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Spesifikasi
| Nomor Bagian Internal | RO-STD16N65M2 |
|---|---|
| Kondisi | Original New |
| Negara Asal | Contact us |
| Penandaan Top | email us |
| Penggantian | See datasheet |
| Tegangan - Uji: | 718pF @ 100V |
| Tegangan - Breakdown: | DPAK |
| Vgs (th) (Max) @ Id: | 360 mOhm @ 5.5A, 10V |
| Vgs (Max): | 10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Seri: | MDmesh™ M2 |
| Status RoHS: | Digi-Reel® |
| Rds Pada (Max) @ Id, Vgs: | 11A (Tc) |
| Polarisasi: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Nama lain: | 497-15258-6 |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 26 Weeks |
| Nomor Bagian Produsen: | STD16N65M2 |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 19.5nC @ 10V |
| IGBT Jenis: | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 4V @ 250µA |
| Fitur FET: | N-Channel |
| Deskripsi yang Diperluas: | N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DPAK |
| Tiriskan untuk Sumber Tegangan (Vdss): | - |
| Deskripsi: | MOSFET N-CH 650V 11A DPAK |
| Current - Continuous Drain (Id) @ 25 ° C: | 650V |
| kapasitansi Ratio: | 110W (Tc) |
| Email: | [email protected] |
bagian terkait untuk STD16N65M2
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